Hysteresis-free deposition of TiOxNy thin films: Effect of the reactive gas mixture and oxidation of the TiN layers on process control

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dc.contributor.authorDuarte, D. A.
dc.contributor.authorMassi, M. [UNIFESP]
dc.contributor.authorSagas, J. C.
dc.contributor.authorSilva Sobrinho, A. S. da
dc.contributor.authorIrala, D. R.
dc.contributor.authorFontana, L. C.
dc.contributor.institutionTechnol Inst Aeronaut
dc.contributor.institutionUniversidade Federal de São Paulo (UNIFESP)
dc.contributor.institutionSanta Catarina State Univ
dc.contributor.institutionCatholic Santa Catarina
dc.date.accessioned2016-01-24T14:35:23Z
dc.date.available2016-01-24T14:35:23Z
dc.date.issued2014-03-01
dc.description.abstractThis paper investigates the effect of the reactive gas mixture (N-2 + O-2 + Ar) and oxidation of the nitride layers on the system stability during the reactive sputter deposition of TiOxNy thin films. the present research is an extension of previous investigations conducted by Severin et al. (Appl. Phys. Lett., 88 (2006) 161504) and Duarte et al. (Appl. Surf. Sci., 269 (2013) 55-59) in which the Berg's model was used. to study reactive deposition of oxynitrides. the results show that the addition of N-2 to the process avoids the formation of a hysteresis loop and facilitates the deposition of films with fractions of TiO2 at any value. These achievements are not possible without this procedure. in contrast, despite eliminating plasma instabilities, the addition of N-2 decreases the mass deposition rate due to the modifications in the sputtering yield. Other results show that the oxidation of TiN also plays a key role in the mass deposition rate and in the hysteresis loop. (C) 2013 Elsevier B.V. All rights reserved.en
dc.description.affiliationTechnol Inst Aeronaut, Plasmas & Proc Lab, BR-12228900 Sao Jose Dos Campos, SP, Brazil
dc.description.affiliationUniversidade Federal de São Paulo, Inst Sci & Technol, BR-12231280 Sao Jose Dos Campos, SP, Brazil
dc.description.affiliationSanta Catarina State Univ, Plasma Phys Lab, BR-89219710 Joinville, SC, Brazil
dc.description.affiliationCatholic Santa Catarina, BR-89203005 Joinville, SC, Brazil
dc.description.affiliationUnifespUniversidade Federal de São Paulo, Inst Sci & Technol, BR-12231280 Sao Jose Dos Campos, SP, Brazil
dc.description.sourceWeb of Science
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipPRONEX
dc.description.sponsorshipIDPRONEX: 11/50773-0
dc.format.extent200-204
dc.identifierhttp://dx.doi.org/10.1016/j.vacuum.2013.08.014
dc.identifier.citationVacuum. Oxford: Pergamon-Elsevier B.V., v. 101, p. 200-204, 2014.
dc.identifier.doi10.1016/j.vacuum.2013.08.014
dc.identifier.issn0042-207X
dc.identifier.urihttp://repositorio.unifesp.br/handle/11600/37502
dc.identifier.wosWOS:000330143000037
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.ispartofVacuum
dc.rightsinfo:eu-repo/semantics/restrictedAccess
dc.rights.licensehttp://www.elsevier.com/about/open-access/open-access-policies/article-posting-policy
dc.subjectReactive depositionen
dc.subjectBerg's modelen
dc.subjectHysteresisen
dc.subjectTiOxNyen
dc.subjectTiO2en
dc.titleHysteresis-free deposition of TiOxNy thin films: Effect of the reactive gas mixture and oxidation of the TiN layers on process controlen
dc.typeinfo:eu-repo/semantics/article
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