The influence of aluminum incorporation on the Structural and Electrical Properties of ZnO Thin Films For Applications in Piezoresistive Sensors

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dc.contributor.authorCardoso, G. W. A. [UNIFESP]
dc.contributor.authorLeal, G. [UNIFESP]
dc.contributor.authorMassi, M. [UNIFESP]
dc.contributor.authorda Silva Sobrinho, A. S.
dc.contributor.authorLibardi, J.
dc.coverageNew York
dc.date.accessioned2020-07-17T14:03:20Z
dc.date.available2020-07-17T14:03:20Z
dc.date.issued2017
dc.description.abstractZinc oxide thin films have high resistivity, plus thermal and chemical stability. Such properties make this material suitable for fabrication of piezo-electric sensors and surface acoustic wave devices that are used in Microelectromechanical systems (MEMS). The addition of metallic nanoparticles into the film matrix can reduce the value of resistivity, and, thus, qualify the material to be used in piezoresistive devices. In this work, a dc magnetron co-sputtering was used to grow Al doped ZnO (AZO) films with different applied voltages in the Al target, deposited on Si (100) p-type substrates with a layer of 1 micron of SiO2 by thermal oxidation. The microstructure and chemical composition of the films were characterized by X-ray diffraction and Rutterford-Backscattering techniques, respectively. The RBS results indicate the presence of aluminum, zinc, and oxygen in the films, which was confirmed by the XRD peaks of ZnO (002) at 2 theta=34.4 degrees Four probe technique confirmed a gradual reduction of resistivity up to 8.10(-3)Omega.cm as the applied power on the Al-target increased.en
dc.description.affiliationFed Univ Sao Paulo UNIFESP, Sci & Technol Inst, Sao Jose Dos Campos, Brazil
dc.description.affiliationAmparense Univ Ctr UNIFIA, Mechatron Dept, Amparo, Brazil
dc.description.affiliationUniv Prebiteriana Mackenzie, Sch Engn PPGEMN, Sao Paulo, Brazil
dc.description.affiliationTechnol Inst Aeronaut ITA, Ctr Sci & Technol Plasmas & Mat PlasMat, Sao Jose Dos Campos, Brazil
dc.description.affiliationUnifespFed Univ Sao Paulo UNIFESP, Sci & Technol Inst, Sao Jose Dos Campos, Brazil
dc.description.sourceWeb of Science
dc.description.sponsorshipFAPESP
dc.description.sponsorshipAEB
dc.description.sponsorshipIDFAPESP: 2013/17045-7
dc.format.extent-
dc.identifierhttps://doi.org/10.1109/SBMicro.2017.8113001
dc.identifier.citation2017 32nd Symposium On Microelectronics Technology And Devices (Sbmicro): Chip On The Sands. New York, v. , p. -, 2017.
dc.identifier.doi10.1109/SBMicro.2017.8113001
dc.identifier.urihttps://repositorio.unifesp.br/handle/11600/55313
dc.identifier.wosWOS:000426524500032
dc.language.isoeng
dc.publisherIEEE
dc.relation.ispartof2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro) - Chip on the Sands
dc.rightsinfo:eu-repo/semantics/restrictedAccess
dc.subjectAl-ZnOen
dc.subjectthin filmsen
dc.subjectDC magnetron sputteringen
dc.titleThe influence of aluminum incorporation on the Structural and Electrical Properties of ZnO Thin Films For Applications in Piezoresistive Sensorsen
dc.typeinfo:eu-repo/semantics/conferenceObject
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