Irradiation induced pulsations of reverse biased metal oxide/silicon structures

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dc.contributor.authorFink, D.
dc.contributor.authorKiv, A.
dc.contributor.authorFuks, D.
dc.contributor.authorTabacnics, M.
dc.contributor.authorRizutto, M. de A.
dc.contributor.authorSilva, A. de O. D.
dc.contributor.authorChandra, A.
dc.contributor.authorGolovanov, V.
dc.contributor.authorIvanovskaya, M.
dc.contributor.authorKhirunenko, L.
dc.contributor.institutionHahn Meitner Inst Berlin GmbH
dc.contributor.institutionBen Gurion Univ Negev
dc.contributor.institutionUniversidade Federal de São Paulo (UNIFESP)
dc.contributor.institutionUniv Delhi
dc.contributor.institutionS Ukrainian State Univ
dc.contributor.institutionBelarusian State Univ
dc.contributor.institutionInst Phys
dc.date.accessioned2016-01-24T13:49:00Z
dc.date.available2016-01-24T13:49:00Z
dc.date.issued2007-08-20
dc.description.abstractSpecific electronic features have been found in structures consisting of metal oxide layers on silicon substrates upon swift heavy ion irradiation. These features are linked to the appearance of radiation-induced negative differential resistances in the structures. in the reversed bias direction they show high frequency current pulsations at around similar to 10 kHz frequency. Their amplitude increases with increasing applied voltage. the pulsation frequency also shows a small increase. the current amplitude depends on the ion fluence and flux. (C) 2007 American Institute of Physics.en
dc.description.affiliationHahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany
dc.description.affiliationBen Gurion Univ Negev, IL-84105 Beer Sheva, Israel
dc.description.affiliationUniversidade Federal de São Paulo, BR-05508090 São Paulo, Brazil
dc.description.affiliationUniv Delhi, Dept Phys & Astrophys, Delhi 110007, India
dc.description.affiliationS Ukrainian State Univ, UA-65008 Odessa, Ukraine
dc.description.affiliationBelarusian State Univ, Minsk 22080, Byelarus
dc.description.affiliationInst Phys, UA-03028 Kiev, Ukraine
dc.description.affiliationUnifespUniversidade Federal de São Paulo, BR-05508090 São Paulo, Brazil
dc.description.sourceWeb of Science
dc.format.extent3
dc.identifierhttp://dx.doi.org/10.1063/1.2773950
dc.identifier.citationApplied Physics Letters. Melville: Amer Inst Physics, v. 91, n. 8, 3 p., 2007.
dc.identifier.doi10.1063/1.2773950
dc.identifier.issn0003-6951
dc.identifier.urihttp://repositorio.unifesp.br/handle/11600/29965
dc.identifier.wosWOS:000248984800102
dc.language.isoeng
dc.publisherAmer Inst Physics
dc.relation.ispartofApplied Physics Letters
dc.rightsinfo:eu-repo/semantics/restrictedAccess
dc.titleIrradiation induced pulsations of reverse biased metal oxide/silicon structuresen
dc.typeinfo:eu-repo/semantics/article
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