Irradiation induced pulsations of reverse biased metal oxide/silicon structures
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2007-08-20
Autores
Fink, D.
Kiv, A.
Fuks, D.
Tabacnics, M.
Rizutto, M. de A.
Silva, A. de O. D.
Chandra, A.
Golovanov, V.
Ivanovskaya, M.
Khirunenko, L.
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Specific electronic features have been found in structures consisting of metal oxide layers on silicon substrates upon swift heavy ion irradiation. These features are linked to the appearance of radiation-induced negative differential resistances in the structures. in the reversed bias direction they show high frequency current pulsations at around similar to 10 kHz frequency. Their amplitude increases with increasing applied voltage. the pulsation frequency also shows a small increase. the current amplitude depends on the ion fluence and flux. (C) 2007 American Institute of Physics.
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Applied Physics Letters. Melville: Amer Inst Physics, v. 91, n. 8, 3 p., 2007.