The influence of aluminum incorporation on the Structural and Electrical Properties of ZnO Thin Films For Applications in Piezoresistive Sensors

The influence of aluminum incorporation on the Structural and Electrical Properties of ZnO Thin Films For Applications in Piezoresistive Sensors

Author Cardoso, G. W. A. Autor UNIFESP Google Scholar
Leal, G. Autor UNIFESP Google Scholar
Massi, M. Autor UNIFESP Google Scholar
da Silva Sobrinho, A. S. Google Scholar
Libardi, J. Google Scholar
Abstract Zinc oxide thin films have high resistivity, plus thermal and chemical stability. Such properties make this material suitable for fabrication of piezo-electric sensors and surface acoustic wave devices that are used in Microelectromechanical systems (MEMS). The addition of metallic nanoparticles into the film matrix can reduce the value of resistivity, and, thus, qualify the material to be used in piezoresistive devices. In this work, a dc magnetron co-sputtering was used to grow Al doped ZnO (AZO) films with different applied voltages in the Al target, deposited on Si (100) p-type substrates with a layer of 1 micron of SiO2 by thermal oxidation. The microstructure and chemical composition of the films were characterized by X-ray diffraction and Rutterford-Backscattering techniques, respectively. The RBS results indicate the presence of aluminum, zinc, and oxygen in the films, which was confirmed by the XRD peaks of ZnO (002) at 2 theta=34.4 degrees Four probe technique confirmed a gradual reduction of resistivity up to 8.10(-3)Omega.cm as the applied power on the Al-target increased.
Keywords Al-ZnO
thin films
DC magnetron sputtering
xmlui.dri2xhtml.METS-1.0.item-coverage New York
Language English
Sponsor FAPESP
AEB
Grant number FAPESP: 2013/17045-7
Date 2017
Published in 2017 32nd Symposium On Microelectronics Technology And Devices (Sbmicro): Chip On The Sands. New York, v. , p. -, 2017.
Publisher IEEE
Extent -
Origin https://doi.org/10.1109/SBMicro.2017.8113001
Access rights Closed access
Type Conference paper
Web of Science ID WOS:000426524500032
URI https://repositorio.unifesp.br/handle/11600/55313

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