Characterization of anodic silicon oxide films grown in room temperature ionic liquids

Characterization of anodic silicon oxide films grown in room temperature ionic liquids

Autor Fiorito, Pablo A. Google Scholar
Alves, Wendel A. Google Scholar
Bazitoi, Fernanda F. C. Autor UNIFESP Google Scholar
El Haber, Fady Google Scholar
Froyer, Gerard Google Scholar
Torresi, Susana I. Cordoba de Google Scholar
Torresi, Roberto M. Google Scholar
Instituição Universidade de São Paulo (USP)
Universidade Federal do ABC (UFABC)
Universidade Federal de São Paulo (UNIFESP)
Univ Nantes
Resumo The electroformation of silicon oxide was performed in two room temperature ionic liquids (RTIL), 1-butyl-3-methyl-imidazolium bis(trifluoromethane sulfonyl) imide (BMITFSI) and N-n-butyl-N-methylpiperidinium bis(trifluoromethane sulfonyl) imide (BMPTFSI). This phenomenon was studied by electrochemical techniques and it was observed that the oxide growth follows a high-field mechanism. X-ray Photoelectron Spectroscopy experiments have shown that a non-stoichiometric oxide film was formed, related to the low water content present in both RTILs (< 30 ppm). the roughness values obtained by using AFM technique of the silicon surface after etching with HF was 1.5 nm (RMS). the electrochemical impedance spectroscopy at low frequencies range was interpreted as a resistance in parallel with a CPE element, the capacitance obtained was associated with the dielectric nature of the oxide formed and the resistance was interpreted considering the chemical dissolution of the oxide by the presence of the TFSI anion. the CPE element was associated with the surface roughness and the very thin oxide film obtained. (C) 2007 Elsevier B.V. All rights reserved.
Assunto ionic liquids
silicon oxides
electrochemical oxidation
impedance spectroscopy
Idioma Inglês
Data 2008-10-30
Publicado em Electrochimica Acta. Oxford: Pergamon-Elsevier B.V., v. 53, n. 25, p. 7396-7402, 2008.
ISSN 0013-4686 (Sherpa/Romeo, fator de impacto)
Editor Elsevier B.V.
Extensão 7396-7402
Direito de acesso Acesso restrito
Tipo Artigo
Web of Science WOS:000259015300006

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