Irradiation induced pulsations of reverse biased metal oxide/silicon structures

Irradiation induced pulsations of reverse biased metal oxide/silicon structures

Author Fink, D. Google Scholar
Kiv, A. Google Scholar
Fuks, D. Google Scholar
Tabacnics, M. Google Scholar
Rizutto, M. de A. Google Scholar
Silva, A. de O. D. Google Scholar
Chandra, A. Google Scholar
Golovanov, V. Google Scholar
Ivanovskaya, M. Google Scholar
Khirunenko, L. Google Scholar
Institution Hahn Meitner Inst Berlin GmbH
Ben Gurion Univ Negev
Universidade Federal de São Paulo (UNIFESP)
Univ Delhi
S Ukrainian State Univ
Belarusian State Univ
Inst Phys
Abstract Specific electronic features have been found in structures consisting of metal oxide layers on silicon substrates upon swift heavy ion irradiation. These features are linked to the appearance of radiation-induced negative differential resistances in the structures. in the reversed bias direction they show high frequency current pulsations at around similar to 10 kHz frequency. Their amplitude increases with increasing applied voltage. the pulsation frequency also shows a small increase. the current amplitude depends on the ion fluence and flux. (C) 2007 American Institute of Physics.
Language English
Date 2007-08-20
Published in Applied Physics Letters. Melville: Amer Inst Physics, v. 91, n. 8, 3 p., 2007.
ISSN 0003-6951 (Sherpa/Romeo, impact factor)
Publisher Amer Inst Physics
Extent 3
Access rights Closed access
Type Article
Web of Science ID WOS:000248984800102

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