Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K

Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K

Autor Nicolett, A. S. Google Scholar
Martino, J. A. Google Scholar
Simoen, E. Google Scholar
Claeys, C. Google Scholar
Instituição Universidade Federal de São Paulo (UNIFESP)
Fac Tecnol São Paulo
IMEC
Resumo This work studies the influence of the back gate voltage on the LDD SOI nMOSFETs series resistance at 300 K and 77 K and corresponding to two different buried oxide thicknesses. the MEDICI simulated results were used to support the analysis. It was observed that for lower buried oxide thickness the influence of the back gate bias is higher, mainly at 77 K. However, this influence becomes negligible when the back interface below the LDD region is inverted and the depletion region in the LDD reaches its maximum saturation value.
Idioma Inglês
Data de publicação 1998-06-01
Publicado em Journal de Physique Iv. Les Ulis Cedexa: E D P Sciences, v. 8, n. P3, p. 25-28, 1998.
ISSN 1155-4339 (Sherpa/Romeo, fator de impacto)
Publicador E D P Sciences
Extensão 25-28
Fonte http://dx.doi.org/10.1051/jp4:1998306
Direito de acesso Acesso restrito
Tipo Artigo
Web of Science WOS:000074756500007
Endereço permanente http://repositorio.unifesp.br/handle/11600/25909

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